AES AND LEED STUDY OF ACTIVATION OF GAAS-CS-O NEGATIVE ELECTRON AFFINITY SURFACES

被引:89
作者
STOCKER, BJ [1 ]
机构
[1] MULLARD RES LABS, REDHILL RH1 5HA, SURREY, ENGLAND
关键词
D O I
10.1016/0039-6028(75)90197-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:501 / 513
页数:13
相关论文
共 22 条
[1]   COMBINED AUGER-ELECTRON SPECTROSCOPY AND SCANNING ELECTRON-MICROSCOPY [J].
ASHWELL, GWB ;
TODD, CJ ;
HECKINGBOTTOM, R .
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1973, 6 (05) :435-438
[2]   PHOTOELECTRON SURFACE ESCAPE PROBABILITY OF (GA,IN)AS-CS-O IN 0.9 TO - 1.6 MUM RANGE [J].
FISHER, DG ;
ENSTROM, RE ;
ESCHER, JS ;
WILLIAMS, BF .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) :3815-&
[3]  
FISHER DG, 1973, C PHOTOELECTRIC SECO
[4]   LEED, AUGER AND PLASMON STUDIES OF NEGATIVE ELECTRON AFFINITY ON SI PRODUCED BY ADSORPTION OF CS AND O [J].
GOLDSTEI.B .
SURFACE SCIENCE, 1973, 35 (01) :227-245
[5]   JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE [J].
HAYASHI, I ;
PANISH, MB ;
FOY, PW ;
SUMSKI, S .
APPLIED PHYSICS LETTERS, 1970, 17 (03) :109-&
[6]   DEPENDENCE ON CRYSTALLINE FACE OF BAND BENDING IN CS2 O-ACTIVATED GAAS [J].
JAMES, LW ;
ANTYPAS, GA ;
EDGECUMBE, J ;
MOON, RL ;
BELL, RL .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) :4976-+
[8]   MOLECULAR BEAM CESIUM SOURCE FOR PHOTOEMISSION EXPERIMENTS [J].
KLEIN, W .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1971, 42 (07) :1082-&
[9]   PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH [J].
KNIGHT, JR ;
EFFER, D ;
EVANS, PR .
SOLID-STATE ELECTRONICS, 1965, 8 (02) :178-&
[10]   STRUCTURAL AND ELECTRONIC MODEL OF NEGATIVE ELECTRON AFFINITY ON SI-CS-O SURFACE [J].
LEVINE, JD .
SURFACE SCIENCE, 1973, 34 (01) :90-107