RESIDUAL NON-IDEALITIES IN THE ALMOST IDEAL SILICON P-N-JUNCTION

被引：9

作者：

CEROFOLINI, GF ^{[1
]}

POLIGNANO, ML ^{[1
]}

机构：

[1] SGS THOMSON MICROELECTR,I-20041 AGRATE,ITALY

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1990年 / 50卷 / 03期

关键词：

61.70; 72.20; 73.40; 85.30;

D O I：

10.1007/BF00324494

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The reproducible, mass production of almost ideal silicon p-n junctions has allowed two new phenomena to be discovered: a pure generation without recombination, and a slow capacitance-free current transient. Our present knowledge of these phenomena is reviewed and speculations about the centres responsible for them are discussed; these centres seem to be connected to ultimate, unavoidable properties of the silicon p-n junction rather than to unwanted impurities. © 1990 Springer-Verlag.

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页码：273 / 286

页数：14

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