THE CONTRIBUTION OF BULK STATES TO THE AC CONDUCTANCE OF METAL-INSULATOR-SEMICONDUCTOR DIODES

被引：19

作者：

BRUNSON, KM

SANDS, D

THOMAS, CB

REEHAL, HS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 01期

关键词：

D O I：

10.1063/1.339179

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：185 / 189

页数：5

共 10 条

[1] THE DENSITY OF LOCALIZED STATES AT THE SEMIINSULATING POLYCRYSTALLINE AND SINGLE-CRYSTAL SILICON INTERFACE [J].

BRUNSON, KM ;

SANDS, D ;

THOMAS, CB ;

REEHAL, HS .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) :3599-3604

[2] CHARGE TRAPPING STUDIES IN SIO2 USING HIGH-CURRENT INJECTION FROM SI-RICH SIO2-FILMS [J].

DIMARIA, DJ ;

GHEZ, R ;

DONG, DW .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) :4830-4841

[3]

HEIMANN FP, 1962, IEEE T ELECTRON DEVI, V12, P167

[4] INTERFACIAL EFFECTS DUE TO TUNNELING TO INSULATOR GAP STATES IN AMORPHOUS-CARBON ON SILICON METAL-INSULATOR-SEMICONDUCTOR STRUCTURES [J].

KHAN, AA ;

WOOLLAM, JA ;

CHUNG, Y .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (12) :4299-4303

[5] HIGHLY RELIABLE HIGH-VOLTAGE TRANSISTORS BY USE OF SIPOS PROCESS [J].

MATSUSHITA, T ;

AOKI, T ;

OHTSU, T ;

YAMOTO, H ;

HAYASHI, H ;

OKAYAMA, M ;

KAWANA, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (08) :826-830

[6] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J].

NICOLLIA.EH ;

GOETZBER.A .

BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06) :1055-+

[7]

NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO, P110

[8]

NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO

[9] CONTRIBUTIONS OF SURFACE STATES TO MOS IMPEDANCE [J].

PREIER, H .

APPLIED PHYSICS LETTERS, 1967, 10 (12) :361-&

[10] THE RELATIVE CONTRIBUTIONS OF RECOMBINATION AND TUNNELING AT INTERFACE STATES TO THE AC CONDUCTANCE OF METAL-INSULATOR-SEMICONDUCTOR DIODES [J].

SANDS, D ;

BRUNSON, KM ;

THOMAS, CB .

SOLID-STATE ELECTRONICS, 1987, 30 (05) :543-548

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