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LIFETIME EVALUATION OF DENUDED ZONE QUALITY AND INTRINSIC GETTERING EFFECT ON HEAVY-METALS
被引:7
作者
:
IKUTA, K
论文数:
0
引用数:
0
h-index:
0
IKUTA, K
OHARA, T
论文数:
0
引用数:
0
h-index:
0
OHARA, T
机构
:
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
|
1984年
/ 23卷
/ 08期
关键词
:
D O I
:
10.1143/JJAP.23.984
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:984 / 990
页数:7
相关论文
共 17 条
[11]
STUDY OF STACKING-FAULTS DURING CMOS PROCESSING - ORIGIN, ELIMINATION AND CONTRIBUTION TO LEAKAGE
[J].
MURARKA, SP
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0
引用数:
0
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0
MURARKA, SP
;
SEIDEL, TE
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0
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0
h-index:
0
SEIDEL, TE
;
DALTON, JV
论文数:
0
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0
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0
DALTON, JV
;
DISHMAN, JM
论文数:
0
引用数:
0
h-index:
0
DISHMAN, JM
;
READ, MH
论文数:
0
引用数:
0
h-index:
0
READ, MH
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(03)
:716
-724
[12]
CHARACTERIZATION OF CRYSTAL DEFECTS AT LEAKAGE SITES IN CHARGE-COUPLED-DEVICES
[J].
OGDEN, R
论文数:
0
引用数:
0
h-index:
0
机构:
PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCESTER,NORTHAMPTONSHIR,ENGLAND
PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCESTER,NORTHAMPTONSHIR,ENGLAND
OGDEN, R
;
WILKINSON, JM
论文数:
0
引用数:
0
h-index:
0
机构:
PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCESTER,NORTHAMPTONSHIR,ENGLAND
PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCESTER,NORTHAMPTONSHIR,ENGLAND
WILKINSON, JM
.
JOURNAL OF APPLIED PHYSICS,
1977,
48
(01)
:412
-414
[13]
ELECTRICALLY ACTIVE STACKING FAULTS IN SILICON.
[J].
Ravi, K.V.
论文数:
0
引用数:
0
h-index:
0
Ravi, K.V.
;
Varker, C.J.
论文数:
0
引用数:
0
h-index:
0
Varker, C.J.
;
Volk, C.E.
论文数:
0
引用数:
0
h-index:
0
Volk, C.E.
.
Journal of the Electrochemical Society,
1973,
120
(04)
:533
-541
[14]
DETRIMENTAL INFLUENCE OF STACKING-FAULTS ON THE REFRESH TIME OF MOS MEMORIES
[J].
STRACK, H
论文数:
0
引用数:
0
h-index:
0
机构:
Simens AG, 8000 Munich 80
STRACK, H
;
MAYER, KR
论文数:
0
引用数:
0
h-index:
0
机构:
Simens AG, 8000 Munich 80
MAYER, KR
;
KOLBESEN, BO
论文数:
0
引用数:
0
h-index:
0
机构:
Simens AG, 8000 Munich 80
KOLBESEN, BO
.
SOLID-STATE ELECTRONICS,
1979,
22
(02)
:135
-+
[15]
INTRINSIC GETTERING BY OXIDE PRECIPITATE INDUCED DISLOCATIONS IN CZOCHRALSKI SI
[J].
TAN, TY
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452
IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452
TAN, TY
;
GARDNER, EE
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452
IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452
GARDNER, EE
;
TICE, WK
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452
IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452
TICE, WK
.
APPLIED PHYSICS LETTERS,
1977,
30
(04)
:175
-176
[16]
CORRELATION OF PULSED MOS CAPACITOR MEASUREMENTS WITH OXIDATION INDUCED DEFECTS
[J].
UNTER, TF
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SOUTHAMPTON,DEPT ELECTR,SOUTHAMPTON SO9 5NH,HAMPSHIRE,ENGLAND
UNIV SOUTHAMPTON,DEPT ELECTR,SOUTHAMPTON SO9 5NH,HAMPSHIRE,ENGLAND
UNTER, TF
;
ROBERTS, PCT
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SOUTHAMPTON,DEPT ELECTR,SOUTHAMPTON SO9 5NH,HAMPSHIRE,ENGLAND
UNIV SOUTHAMPTON,DEPT ELECTR,SOUTHAMPTON SO9 5NH,HAMPSHIRE,ENGLAND
ROBERTS, PCT
;
LAMB, DR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SOUTHAMPTON,DEPT ELECTR,SOUTHAMPTON SO9 5NH,HAMPSHIRE,ENGLAND
UNIV SOUTHAMPTON,DEPT ELECTR,SOUTHAMPTON SO9 5NH,HAMPSHIRE,ENGLAND
LAMB, DR
.
ELECTRONICS LETTERS,
1977,
13
(04)
:93
-94
[17]
ZERBST M, 1966, Z ANGEW PHYSIK, V22, P30
←
1
2
→
共 17 条
[11]
STUDY OF STACKING-FAULTS DURING CMOS PROCESSING - ORIGIN, ELIMINATION AND CONTRIBUTION TO LEAKAGE
[J].
MURARKA, SP
论文数:
0
引用数:
0
h-index:
0
MURARKA, SP
;
SEIDEL, TE
论文数:
0
引用数:
0
h-index:
0
SEIDEL, TE
;
DALTON, JV
论文数:
0
引用数:
0
h-index:
0
DALTON, JV
;
DISHMAN, JM
论文数:
0
引用数:
0
h-index:
0
DISHMAN, JM
;
READ, MH
论文数:
0
引用数:
0
h-index:
0
READ, MH
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(03)
:716
-724
[12]
CHARACTERIZATION OF CRYSTAL DEFECTS AT LEAKAGE SITES IN CHARGE-COUPLED-DEVICES
[J].
OGDEN, R
论文数:
0
引用数:
0
h-index:
0
机构:
PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCESTER,NORTHAMPTONSHIR,ENGLAND
PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCESTER,NORTHAMPTONSHIR,ENGLAND
OGDEN, R
;
WILKINSON, JM
论文数:
0
引用数:
0
h-index:
0
机构:
PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCESTER,NORTHAMPTONSHIR,ENGLAND
PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCESTER,NORTHAMPTONSHIR,ENGLAND
WILKINSON, JM
.
JOURNAL OF APPLIED PHYSICS,
1977,
48
(01)
:412
-414
[13]
ELECTRICALLY ACTIVE STACKING FAULTS IN SILICON.
[J].
Ravi, K.V.
论文数:
0
引用数:
0
h-index:
0
Ravi, K.V.
;
Varker, C.J.
论文数:
0
引用数:
0
h-index:
0
Varker, C.J.
;
Volk, C.E.
论文数:
0
引用数:
0
h-index:
0
Volk, C.E.
.
Journal of the Electrochemical Society,
1973,
120
(04)
:533
-541
[14]
DETRIMENTAL INFLUENCE OF STACKING-FAULTS ON THE REFRESH TIME OF MOS MEMORIES
[J].
STRACK, H
论文数:
0
引用数:
0
h-index:
0
机构:
Simens AG, 8000 Munich 80
STRACK, H
;
MAYER, KR
论文数:
0
引用数:
0
h-index:
0
机构:
Simens AG, 8000 Munich 80
MAYER, KR
;
KOLBESEN, BO
论文数:
0
引用数:
0
h-index:
0
机构:
Simens AG, 8000 Munich 80
KOLBESEN, BO
.
SOLID-STATE ELECTRONICS,
1979,
22
(02)
:135
-+
[15]
INTRINSIC GETTERING BY OXIDE PRECIPITATE INDUCED DISLOCATIONS IN CZOCHRALSKI SI
[J].
TAN, TY
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452
IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452
TAN, TY
;
GARDNER, EE
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452
IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452
GARDNER, EE
;
TICE, WK
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452
IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452
TICE, WK
.
APPLIED PHYSICS LETTERS,
1977,
30
(04)
:175
-176
[16]
CORRELATION OF PULSED MOS CAPACITOR MEASUREMENTS WITH OXIDATION INDUCED DEFECTS
[J].
UNTER, TF
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SOUTHAMPTON,DEPT ELECTR,SOUTHAMPTON SO9 5NH,HAMPSHIRE,ENGLAND
UNIV SOUTHAMPTON,DEPT ELECTR,SOUTHAMPTON SO9 5NH,HAMPSHIRE,ENGLAND
UNTER, TF
;
ROBERTS, PCT
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SOUTHAMPTON,DEPT ELECTR,SOUTHAMPTON SO9 5NH,HAMPSHIRE,ENGLAND
UNIV SOUTHAMPTON,DEPT ELECTR,SOUTHAMPTON SO9 5NH,HAMPSHIRE,ENGLAND
ROBERTS, PCT
;
LAMB, DR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SOUTHAMPTON,DEPT ELECTR,SOUTHAMPTON SO9 5NH,HAMPSHIRE,ENGLAND
UNIV SOUTHAMPTON,DEPT ELECTR,SOUTHAMPTON SO9 5NH,HAMPSHIRE,ENGLAND
LAMB, DR
.
ELECTRONICS LETTERS,
1977,
13
(04)
:93
-94
[17]
ZERBST M, 1966, Z ANGEW PHYSIK, V22, P30
←
1
2
→