REDUCTION OF TRANSIENT-ENHANCED DIFFUSION OF BORON IN SILICON BY IMPLANTATION THROUGH OXIDE

被引：3

作者：

FAN, D

JACCODINE, RJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 07期

关键词：

D O I：

10.1063/1.100891

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：603 / 605

页数：3

共 15 条

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JACCODINE, RJ .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (11) :5521-5525

[6]

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[7] CHARACTERIZATION OF STRUCTURAL DEFECTS IN ANNEALED SILICON CONTAINING OXYGEN [J].

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[8] RAPID ANNEALING AND THE ANOMALOUS DIFFUSION OF ION-IMPLANTED BORON INTO SILICON [J].

MICHEL, AE ;

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APPLIED PHYSICS LETTERS, 1987, 50 (07) :416-418

[9] IMPLANTATION DAMAGE AND THE ANOMALOUS TRANSIENT DIFFUSION OF ION-IMPLANTED BORON [J].

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RONSHEIM, PA .

APPLIED PHYSICS LETTERS, 1987, 51 (07) :487-489

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