HIGH-RESOLUTION ELECTRON-MICROSCOPY OBSERVATIONS OF PRECIPITATES IN P-SUPERSATURATED SILICON

被引：12

作者：

ARMIGLIATO, A ^{[1
]}

WERNER, P ^{[1
]}

机构：

[1] AKAD WISSENSCH DDR,INST FESTKOPERPHYS & ELEKTRONENMIKROSKOPIE,DDR-4020 HALLE SAALE,GER DEM REP

来源：

ULTRAMICROSCOPY | 1984年 / 15卷 / 1-2期

关键词：

D O I：

10.1016/0304-3991(84)90075-5

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

引用

页码：61 / 69

页数：9

共 24 条

[11] FORMATION AND COMPOSITION OF SURFACE LAYERS AND SOLUBILITY LIMITS OF PHOSPHORUS DURING DIFFUSION IN SILICON [J].

KOOI, E .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (12) :1383-1381

[12] PRECIPITATION AS THE PHENOMENON RESPONSIBLE FOR THE ELECTRICALLY INACTIVE ARSENIC IN SILICON [J].

NOBILI, D ;

CARABELAS, A ;

CELOTTI, G ;

SOLMI, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (04) :922-928

[13] PRECIPITATION AS THE PHENOMENON RESPONSIBLE FOR THE ELECTRICALLY INACTIVE PHOSPHORUS IN SILICON [J].

NOBILI, D ;

ARMIGLIATO, A ;

FINETTI, M ;

SOLMI, S .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1484-1491

[14]

NOBILI D, 1982, SATELLITE S AGGREGAT, P189

[15] ISOCHRONAL ANNEALING OF SILICON-PHOSPHORUS SOLID-SOLUTIONS [J].

OSTOJA, P ;

NOBILI, D ;

ARMIGLIATO, A ;

ANGELUCCI, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (01) :124-129

[16]

OSUGI J, 1966, REV PHYS CHEM JPN, V36, P35

[17] DOUBLE CRYSTAL X-RAY-ANALYSIS OF PHOSPHORUS PRECIPITATION IN SUPERSATURATED SI-P SOLID-SOLUTIONS [J].

SERVIDORI, M ;

MONTE, CD ;

ZINI, Q .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 80 (01) :277-285

[18] RESIDUAL LATTICE DISORDER IN SELF-IMPLANTED SILICON AFTER PULSED LASER IRRADIATION [J].

SERVIDORI, M ;

ZANI, A ;

GARULLI, G .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 70 (02) :691-701

[19] ELECTRON-MICROSCOPY OF SILICON MONOPHOSPHIDE PRECIPITATES IN P-DIFFUSED SILICON [J].

SERVIDORI, M ;

ARMIGLIATO, A .

JOURNAL OF MATERIALS SCIENCE, 1975, 10 (02) :306-313

[20]

SIFFERT P, 1978, P C LASER EFFECTS IO, P63

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