COMPENSATION MECHANISMS IN N+-GAAS DOPED WITH SILICON

被引：22

作者：

VENKATASUBRAMANIAN, R

PATEL, K

GHANDHI, SK

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 94卷 / 01期

关键词：

D O I：

10.1016/0022-0248(89)90599-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：34 / 40

页数：7

共 15 条

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