DIELECTRICS DEGRADATION OF ALPHA-SI/CO/SIO2/SI STRUCTURE DURING FURNACE ANNEALING

被引：4

作者：

CHEN, BS ^{[1
]}

CHEN, MC ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU 300,TAIWAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1994年 / 141卷 / 07期

关键词：

D O I：

10.1149/1.2055029

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The dielectric properties, which are highlighted on electrical characteristics, of alpha-Si/CO/SiO2/Si Structure after thermal annealing have been studied. A one-step high temperature (greater-than-or-equal-to 700-degrees-C) annealing process is found to deteriorate considerably the characteristics of the masking oxide. The tetraethylorthosilicate oxide needs a high-temperature preanneal prior to the self-aligned silicided (SALICIDE) process in order to prevent crack and pit formation and severe electrical degradation during silicidation annealing. A two-step annealing process with the first annealing performed at 550-degrees-C for 30 min has proved to be a trustworthy salicide process without affecting the dielectric properties of masking oxide.

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页码：1931 / 1937

页数：7

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