NEW METHOD TO DETERMINE THE CARBON CONCENTRATION IN SILICON

被引：41

作者：

WEBER, J

SINGH, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 23期

关键词：

D O I：

10.1063/1.97246

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1617 / 1619

页数：3

共 12 条

[1] THE PRODUCTION AND DESTRUCTION OF THE C-RELATED 969 MEV ABSORPTION-BAND IN SI [J].

DAVIES, G ;

LIGHTOWLERS, EC ;

DOCARMO, MC ;

WILKES, JG ;

WOLSTENHOLME, GR .

SOLID STATE COMMUNICATIONS, 1984, 50 (12) :1057-1061

[2] CARBON-RELATED RADIATION-DAMAGE CENTERS IN CZOCHRALSKI SILICON [J].

DAVIES, G ;

OATES, AS ;

NEWMAN, RC ;

WOOLLEY, R ;

LIGHTOWLERS, EC ;

BINNS, MJ ;

WILKES, JG .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (06) :841-855

[3] CARBON IN RADIATION-DAMAGE CENTERS IN CZOCHRALSKI SILICON [J].

DAVIES, G ;

LIGHTOWLERS, EC ;

WOOLLEY, R ;

NEWMAN, RC ;

OATES, AS .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (19) :L499-L503

[4] PHOTOLUMINESCENCE OF LOW-ENERGY ION BOMBARDED SILICON [J].

DAVIS, RJ ;

HABERMEIER, HU ;

WEBER, J .

APPLIED PHYSICS LETTERS, 1985, 47 (12) :1295-1297

[5] UNIAXIAL-STRESS MEASUREMENTS ON THE 0.97EV LINE IN IRRADIATED SILICON [J].

FOY, CP ;

DOCARMO, MC ;

DAVIES, G ;

LIGHTOWLERS, EC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (01) :L7-L12

[6] PHOTOLUMINESCENCE FROM SI IRRADIATED WITH 1.5-MEV ELECTRONS AT 100DEGREESK [J].

NOONAN, JR ;

KIRKPATRICK, CG ;

STREETMAN, BG .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :3010-3015

[7] DETERMINATION OF LOW-LEVELS OF CARBON IN CZOCHRALSKI SILICON [J].

OATES, AS ;

NEWMAN, RC ;

WOOLLEY, R ;

DAVIES, G ;

LIGHTOWLERS, EC ;

BINNS, MJ ;

WILKES, JG .

APPLIED PHYSICS LETTERS, 1985, 47 (07) :705-707

[8] ORIGIN OF THE 0.97 EV LUMINESCENCE IN IRRADIATED SILICON [J].

ODONNELL, KP ;

LEE, KM ;

WATKINS, GD .

PHYSICA B & C, 1983, 116 (1-3) :258-263

[9] NEW MODEL OF THE IRRADIATION-INDUCED 0.97-EV (G) LINE IN SILICON - A CS-SI-STAR COMPLEX [J].

THONKE, K ;

KLEMISCH, H ;

WEBER, J ;

SAUER, R .

PHYSICAL REVIEW B, 1981, 24 (10) :5874-5886

[10] CARBON AND OXYGEN ISOTOPE EFFECTS IN THE 0.79 EV DEFECT PHOTOLUMINESCENCE SPECTRUM IN IRRADIATED SILICON [J].

THONKE, K ;

WATKINS, GD ;

SAUER, R .

SOLID STATE COMMUNICATIONS, 1984, 51 (03) :127-130

← 1 2 →