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EFFECTS OF CORONA-DISCHARGE-INDUCED OXYGEN ION-BEAMS AND ELECTRIC-FIELDS ON SILICON OXIDATION-KINETICS .2. ELECTRIC-FIELD EFFECTS
被引:19
作者
:
MODLIN, DN
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV, DEPT MAT SCI & ENGN, STANFORD, CA 94305 USA
STANFORD UNIV, DEPT MAT SCI & ENGN, STANFORD, CA 94305 USA
MODLIN, DN
[
1
]
TILLER, WA
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV, DEPT MAT SCI & ENGN, STANFORD, CA 94305 USA
STANFORD UNIV, DEPT MAT SCI & ENGN, STANFORD, CA 94305 USA
TILLER, WA
[
1
]
机构
:
[1]
STANFORD UNIV, DEPT MAT SCI & ENGN, STANFORD, CA 94305 USA
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1985年
/ 132卷
/ 07期
关键词
:
D O I
:
10.1149/1.2114184
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
34
引用
收藏
页码:1659 / 1663
页数:5
相关论文
共 34 条
[1]
INTERFACE EFFECTS IN THE FORMATION OF SILICON-OXIDE ON METAL SILICIDE LAYERS OVER SILICON SUBSTRATES
[J].
BAGLIN, JEE
论文数:
0
引用数:
0
h-index:
0
BAGLIN, JEE
;
DHEURLE, FM
论文数:
0
引用数:
0
h-index:
0
DHEURLE, FM
;
PETERSSON, CS
论文数:
0
引用数:
0
h-index:
0
PETERSSON, CS
.
JOURNAL OF APPLIED PHYSICS,
1983,
54
(04)
:1849
-1854
[2]
THERMAL-OXIDATION OF NICKEL DISILICIDE
[J].
BARTUR, M
论文数:
0
引用数:
0
h-index:
0
BARTUR, M
;
NICOLET, MA
论文数:
0
引用数:
0
h-index:
0
NICOLET, MA
.
APPLIED PHYSICS LETTERS,
1982,
40
(02)
:175
-177
[3]
A MODEL FOR OXIDATION OF SILICON BY OXYGEN
[J].
CRISTY, SS
论文数:
0
引用数:
0
h-index:
0
CRISTY, SS
;
CONDON, JB
论文数:
0
引用数:
0
h-index:
0
CONDON, JB
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1981,
128
(10)
:2170
-2174
[4]
GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
[J].
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
;
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
.
JOURNAL OF APPLIED PHYSICS,
1965,
36
(12)
:3770
-&
[5]
OXIDATION OF SILICON BY WATER AND OXYGEN AND DIFFUSION IN FUSED SILICA
[J].
DOREMUS, RH
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT MAT ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT MAT ENGN,TROY,NY 12181
DOREMUS, RH
.
JOURNAL OF PHYSICAL CHEMISTRY,
1976,
80
(16)
:1773
-1775
[6]
KINETICS OF THERMAL GROWTH OF ULTRA-THIN LAYERS OF SIO2 ON SILICON .2. THEORY
[J].
GHEZ, R
论文数:
0
引用数:
0
h-index:
0
GHEZ, R
;
VANDERME.YJ
论文数:
0
引用数:
0
h-index:
0
VANDERME.YJ
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(08)
:1100
-+
[7]
HALL RN, 1968, UNPUB
[8]
EFFECT OF AN ELECTRIC FIELD ON SILICON OXIDATION
[J].
JORGENSEN
论文数:
0
引用数:
0
h-index:
0
JORGENSEN
.
JOURNAL OF CHEMICAL PHYSICS,
1962,
37
(04)
:874
-&
[9]
COMMENTS ON PAPER TRANSPORT PROCESSES IN THERMAL OXIDATION OF SILICON
[J].
JORGENSEN, PJ
论文数:
0
引用数:
0
h-index:
0
JORGENSEN, PJ
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(08)
:820
-+
[10]
JORGENSEN PJ, 1970, OXIDATION METALS ALL, P157
←
1
2
3
4
→
共 34 条
[1]
INTERFACE EFFECTS IN THE FORMATION OF SILICON-OXIDE ON METAL SILICIDE LAYERS OVER SILICON SUBSTRATES
[J].
BAGLIN, JEE
论文数:
0
引用数:
0
h-index:
0
BAGLIN, JEE
;
DHEURLE, FM
论文数:
0
引用数:
0
h-index:
0
DHEURLE, FM
;
PETERSSON, CS
论文数:
0
引用数:
0
h-index:
0
PETERSSON, CS
.
JOURNAL OF APPLIED PHYSICS,
1983,
54
(04)
:1849
-1854
[2]
THERMAL-OXIDATION OF NICKEL DISILICIDE
[J].
BARTUR, M
论文数:
0
引用数:
0
h-index:
0
BARTUR, M
;
NICOLET, MA
论文数:
0
引用数:
0
h-index:
0
NICOLET, MA
.
APPLIED PHYSICS LETTERS,
1982,
40
(02)
:175
-177
[3]
A MODEL FOR OXIDATION OF SILICON BY OXYGEN
[J].
CRISTY, SS
论文数:
0
引用数:
0
h-index:
0
CRISTY, SS
;
CONDON, JB
论文数:
0
引用数:
0
h-index:
0
CONDON, JB
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1981,
128
(10)
:2170
-2174
[4]
GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
[J].
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
;
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
.
JOURNAL OF APPLIED PHYSICS,
1965,
36
(12)
:3770
-&
[5]
OXIDATION OF SILICON BY WATER AND OXYGEN AND DIFFUSION IN FUSED SILICA
[J].
DOREMUS, RH
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT MAT ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT MAT ENGN,TROY,NY 12181
DOREMUS, RH
.
JOURNAL OF PHYSICAL CHEMISTRY,
1976,
80
(16)
:1773
-1775
[6]
KINETICS OF THERMAL GROWTH OF ULTRA-THIN LAYERS OF SIO2 ON SILICON .2. THEORY
[J].
GHEZ, R
论文数:
0
引用数:
0
h-index:
0
GHEZ, R
;
VANDERME.YJ
论文数:
0
引用数:
0
h-index:
0
VANDERME.YJ
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(08)
:1100
-+
[7]
HALL RN, 1968, UNPUB
[8]
EFFECT OF AN ELECTRIC FIELD ON SILICON OXIDATION
[J].
JORGENSEN
论文数:
0
引用数:
0
h-index:
0
JORGENSEN
.
JOURNAL OF CHEMICAL PHYSICS,
1962,
37
(04)
:874
-&
[9]
COMMENTS ON PAPER TRANSPORT PROCESSES IN THERMAL OXIDATION OF SILICON
[J].
JORGENSEN, PJ
论文数:
0
引用数:
0
h-index:
0
JORGENSEN, PJ
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(08)
:820
-+
[10]
JORGENSEN PJ, 1970, OXIDATION METALS ALL, P157
←
1
2
3
4
→