AVALANCHE BREAKDOWN OF DIFFUSED SILICON P-N JUNCTIONS

[11] KENNEDY DP, 1962, IRE T ELECTRON DEV, VED9, P478

[12] IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J]. PHYSICAL REVIEW, 1964, 134 (3A): : A761 - +

[13] AVALANCHE BREAKDOWN IN GALLIUM ARSENIDE PARA JUNCTIONS [J]. PHYSICAL REVIEW, 1962, 128 (06): : 2518 - &

[14] DETERMINATION OF AVALANCHE BREAKDOWN IN PN JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (10) : 1613 - 1614

[15] AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1954, 94 (04): : 877 - 884

[16] ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1953, 91 (05): : 1079 - 1084

[17] AVALANCHE BREAKDOWN IN GERMANIUM [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1234 - 1241

[18] IONIZATION RATES FOR HOLES AND ELECTRONS IN SILICON [J]. PHYSICAL REVIEW, 1957, 105 (04): : 1246 - 1249

[19] SECONDARY MULTIPLICATION IN SILICON [J]. SOLID-STATE ELECTRONICS, 1961, 3 (02) : 155 - 158

[20] CHARGE MULTIPLICATION IN SILICON P-N JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 147 - 157

[11] KENNEDY DP, 1962, IRE T ELECTRON DEV, VED9, P478

[12] IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J]. PHYSICAL REVIEW, 1964, 134 (3A): : A761 - +

[13] AVALANCHE BREAKDOWN IN GALLIUM ARSENIDE PARA JUNCTIONS [J]. PHYSICAL REVIEW, 1962, 128 (06): : 2518 - &

[14] DETERMINATION OF AVALANCHE BREAKDOWN IN PN JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (10) : 1613 - 1614

[15] AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1954, 94 (04): : 877 - 884

[16] ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1953, 91 (05): : 1079 - 1084

[17] AVALANCHE BREAKDOWN IN GERMANIUM [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1234 - 1241

[18] IONIZATION RATES FOR HOLES AND ELECTRONS IN SILICON [J]. PHYSICAL REVIEW, 1957, 105 (04): : 1246 - 1249

[19] SECONDARY MULTIPLICATION IN SILICON [J]. SOLID-STATE ELECTRONICS, 1961, 3 (02) : 155 - 158

[20] CHARGE MULTIPLICATION IN SILICON P-N JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 147 - 157