A STUDY OF THE USE OF ULTRAVIOLET OZONE CLEANING FOR REDUCTION OF THE DEFECT DENSITY ON MOLECULAR-BEAM EPITAXY GROWN GAAS WAFERS

被引：13

作者：

KOPF, RF ^{[1
]}

KINSELLA, AP ^{[1
]}

EBERT, CW ^{[1
]}

机构：

[1] AT&T MICROELECTR,READING,PA 19604

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 01期

关键词：

D O I：

10.1116/1.585274

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A problem with molecular beam epitaxy growth of semiconductors is the presence of defects. Since most of them originate at the substrate/epitaxial interface, special attention must be given to the treatment of the surface before growth. It must be clean on an atomic scale. This study has found that a combination of ultraviolet-ozone treatment and chemical etching produces the lowest defect density in the grown layer.

引用

收藏

页码：132 / 135

页数：4

相关论文

共 15 条

[1] X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF GAAS (001) AND INP (001) CLEANING PROCEDURES PRIOR TO MOLECULAR-BEAM EPITAXY [J].

CONTOUR, JP ;

MASSIES, J ;

SALETES, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (07) :L563-L565

[2] X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF GAAS (001) SURFACE THERMOCLEANING PRIOR TO MOLECULAR-BEAM EPITAXY [J].

CONTOUR, JP ;

MASSIES, J ;

SALETES, A ;

STAIB, P .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 38 (01) :45-47

[3] EFFECTS OF SUBSTRATE PREPARATION CONDITIONS ON GAAS OVAL DEFECTS GROWN BY MOLECULAR-BEAM EPITAXY [J].

FUJIWARA, K ;

NISHIKAWA, Y ;

TOKUDA, Y ;

NAKAYAMA, T .

APPLIED PHYSICS LETTERS, 1986, 48 (11) :701-703

[4] AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY ON OZONE TREATED GAAS-SURFACES [J].

INGREY, S ;

LAU, WM ;

MCINTYRE, NS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :984-988

[5] ORIGIN OF SURFACE-DEFECTS ON MOLECULAR-BEAM EPITAXIALLY GROWN GAAS [J].

ITO, T ;

SHINOHARA, M ;

IMAMURA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08) :L524-L526

[6] SUBSTRATE CHEMICAL ETCHING PRIOR TO MOLECULAR-BEAM EPITAXY - AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF GAAS (001) SURFACES ETCHED BY THE H2SO4-H2O2-H2O SOLUTION [J].

MASSIES, J ;

CONTOUR, JP .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) :806-810

[7]

MATTESON S, 1985, MATER RES SOC S P, V48, P215

[8] UV-OZONE CLEANING OF GAAS FOR MBE [J].

MCCLINTOCK, JA ;

WILSON, RA ;

BYER, NE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (02) :241-242

[9]

NABU K, 1986, J ELECTROCHEM SOC SO, P601

[10]

SALETES A, 1986, JPN J APPL PHYS 2, V25, pL48, DOI 10.1143/JJAP.25.L48