PROXIMITY EFFECT CORRECTION FOR HIGH-VOLTAGE ELECTRON-BEAM LITHOGRAPHY

被引：15

作者：

ABE, T

TAKIGAWA, T

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 11期

关键词：

D O I：

10.1063/1.343283

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4428 / 4434

页数：7

共 20 条

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[5] APPLYING TRANSFORM BASED PROXIMITY CORRECTIONS TO ELECTRON-BEAM LITHOGRAPHY WITH 0.2-MU-M FEATURES
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[7] ENERGY BROADENING IN ELECTRON-BEAMS - A COMPARISON OF EXISTING THEORIES AND MONTE-CARLO SIMULATION
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01): : 190 - 193
[8] MANKIEWICH PM, 1985, J VAC SCI TECHNOL B, V4, P174
[9] A MODEL FOR OPTIMIZING CPU TIME FOR PROXIMITY CORRECTION
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1300 - 1303
[10] THE EFFECT OF ACCELERATION VOLTAGE ON LINEWIDTH CONTROL WITH A VARIABLE-SHAPED ELECTRON-BEAM SYSTEM
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01): : 105 - 109

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