NEARLY IDEAL CHARACTERISTICS OF GAAS METAL-INSULATOR-SEMICONDUCTOR DIODES BY ATOMIC LAYER PASSIVATION

被引：15

作者：

WADA, Y

WADA, K

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 06期

关键词：

D O I：

10.1116/1.587564

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：3084 / 3089

页数：6

共 36 条

[1] EFFECT OF SODIUM SULFIDE TREATMENT ON BAND BENDING IN GAAS [J].

BESSER, RS ;

HELMS, CR .

APPLIED PHYSICS LETTERS, 1988, 52 (20) :1707-1709

[2] SURFACE STATES ON THE (III) SURFACE OF INDIUM ANTIMONIDE [J].

DAVIS, JL .

SURFACE SCIENCE, 1964, 2 :33-39

[3] STANDARDIZED TERMINOLOGY FOR OXIDE CHARGES ASSOCIATED WITH THERMALLY OXIDIZED SILICON [J].

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (04) :979-981

[4] STUDIES OF GAAS OXIDE INTERFACES WITH AND WITHOUT SI INTERLAYER [J].

FREEOUF, JL ;

BUCHANAN, DA ;

WRIGHT, SL ;

JACKSON, TN ;

BATEY, J ;

ROBINSON, B ;

CALLEGARI, A ;

PACCAGNELLA, A ;

WOODALL, JM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04) :860-866

[5] METAL (100)GAAS INTERFACE - CASE FOR A METAL-INSULATOR-SEMICONDUCTOR-LIKE STRUCTURE [J].

FREEOUF, JL ;

WOODALL, JM ;

BRILLSON, LJ ;

VITURRO, RE .

APPLIED PHYSICS LETTERS, 1990, 56 (01) :69-71

[6] SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J].

FREEOUF, JL ;

WOODALL, JM .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :727-729

[7] ACCUMULATION CAPACITANCE FOR GAAS-SIO2 INTERFACES WITH SI INTERLAYERS [J].

FREEOUF, JL ;

BACHANAN, DA ;

WRIGHT, SL ;

JACKSON, TN ;

ROBINSON, B .

APPLIED PHYSICS LETTERS, 1990, 57 (18) :1919-1921

[8] DO WE NEED A NEW METHODOLOGY FOR GAAS PASSIVATION [J].

GREEN, AM ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (04) :1061-1069

[9] UNIFIED DISORDER INDUCED GAP STATE MODEL FOR INSULATOR-SEMICONDUCTOR AND METAL-SEMICONDUCTOR INTERFACES [J].

HASEGAWA, H ;

OHNO, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :1130-1138

[10] GAAS AND IN0.53GA0.47AS MIS STRUCTURES HAVING AN ULTRATHIN PSEUDOMORPHIC INTERFACE CONTROL LAYER OF SI PREPARED BY MBE [J].

HASEGAWA, H ;

AKAZAWA, M ;

MATSUZAKI, KI ;

ISHII, H ;

OHNO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (12) :L2265-L2267

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