SILICON-NITRIDE AND OXYNITRIDE FILMS

被引：150

作者：

HABRAKEN, FHPM ^{[1
]}

KUIPER, AET ^{[1
]}

机构：

[1] PHILIPS RES LABS, 5600 JA EINDHOVEN, NETHERLANDS

来源：

MATERIALS SCIENCE & ENGINEERING R-REPORTS | 1994年 / 12卷 / 03期

关键词：

D O I：

10.1016/0927-796X(94)90006-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The physics and chemistry of amorphous silicon oxynitride films are reviewed. Since the main applications of these materials are in the manufacture of Si-based integrated circuits (ICs), phenomena such as diffusion mechanisms, oxidation kinetics, defects and charge trapping are given special attention. Mature thin-film technologies to form oxynitride layers are the various types of chemical vapour deposition and thermal processing in NH3 and N2O. Determined by their growth process, oxynitrides contain a certain amount of hydrogen which is shown to play a key role in the reactivity of these materials. Once this is understood, it is possible to relate the properties of a wide range of oxynitrides to their composition and the micro-chemistry involved.

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页码：123 / 175

页数：53

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