CONTROL OF PREFERENTIALLY ORIENTED CRYSTAL-GROWTH OF TITANIUM NITRIDE - EFFECTS OF NITROGEN ADSORPTION AND ION-BEAM IRRADIATION IN DYNAMIC MIXING PROCESS

Titanium nitride films which are deposited on a Si wafer by titanium evaporation and simultaneous nitrogen ion-beam irradiation have preferred orientations, which depend on Ti atom/N+ ion arrival ratio. The effects of nitrogen pressure and ion beam irradiation are discussed to clarify the mechanism of the variation of crystallization. Nitridation with adsorbed nitrogen leads to [111]-oriented TiN crystal growth. Ion bombardment induces [100]-oriented TiN crystal growth. This effect is covered by the nitridation with adsorbed nitrogen, for higher nitrogen pressure case. The difference in the growth rates of [111]-oriented crystals and that of [100]-oriented crystals leads to the variation of preferred orientations, and so the control of the orientation of crystal growth is available.