A NEW FORMATION PROCESS OF ANODIZABLE STRUCTURES OF N,N+, AND N- SILICON FOR THE PRODUCTION OF SILICON-ON-INSULATOR STRUCTURES

被引：11

作者：

TU, XZ ^{[1
]}

机构：

[1] TEXAS A&M UNIV,DEPT ELECT ENGN,COLLEGE STN,TX 77843

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 05期

关键词：

D O I：

10.1116/1.584208

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1530 / 1532

页数：3

共 11 条

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[8]

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