THERMAL DEGENERATION OF MO AND PT SILICON SCHOTTKY DIODES

被引:12
作者
CALLEJA, E [1 ]
GARRIDO, J [1 ]
PIQUERAS, J [1 ]
机构
[1] CNRS,AUTOMAT & ANAL SYST LAB,F-31055 TOULOUSE,FRANCE
关键词
D O I
10.1016/0038-1101(80)90041-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:591 / 598
页数:8
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[1]   CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES [J].
ANDREWS, JM ;
PHILLIPS, JC .
PHYSICAL REVIEW LETTERS, 1975, 35 (01) :56-59
[2]   REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES [J].
ANDREWS, JM ;
LEPSELTER, MP .
SOLID-STATE ELECTRONICS, 1970, 13 (07) :1011-+
[3]   ROLE OF METAL-SEMICONDUCTOR INTERFACE IN SILICON INTEGRATED-CIRCUIT TECHNOLOGY [J].
ANDREWS, JM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06) :972-984
[4]   SCHOTTKY-BARRIER CAPACITANCE MEASUREMENTS FOR DEEP LEVEL IMPURITY DETERMINATION [J].
BLEICHER, M ;
LANGE, E .
SOLID-STATE ELECTRONICS, 1973, 16 (03) :375-380
[5]   GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON [J].
BOWER, RW ;
MAYER, JW .
APPLIED PHYSICS LETTERS, 1972, 20 (09) :359-&
[6]   PT2SI AND PTSI FORMATION WITH HIGH-PURITY PT THIN-FILMS [J].
CANALI, C ;
CATELLANI, C ;
PRUDENZIATI, M ;
WADLIN, WH ;
EVANS, CA .
APPLIED PHYSICS LETTERS, 1977, 31 (01) :43-45
[7]   FORMATION OF NI AND PT SILICIDE 1ST PHASE - DOMINANT ROLE OF REACTION-KINETICS [J].
CANALI, C ;
CATELLANI, F ;
OTTAVIANI, G ;
PRUDENZIATI, M .
APPLIED PHYSICS LETTERS, 1978, 33 (02) :187-190
[8]   EFFECT OF AN INTERFACIAL LAYER ON MINORITY-CARRIER INJECTION IN FORWARD-BIASED SILICON SCHOTTKY DIODES [J].
CARD, HC ;
RHODERICK, EH .
SOLID-STATE ELECTRONICS, 1973, 16 (03) :365-374
[9]   ELECTRON-IRRADIATION-INDUCED DIVACANCY IN LIGHTLY DOPED SILICON [J].
EVWARAYE, AO ;
SUN, E .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) :3776-3780
[10]   ELECTRON-IRRADIATION DAMAGE IN ANTIMONY-DOPED SILICON [J].
EVWARAYE, AO .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (02) :734-738