THERMAL DEGENERATION OF MO AND PT SILICON SCHOTTKY DIODES

被引：12

作者：

CALLEJA, E ^{[1
]}

GARRIDO, J ^{[1
]}

PIQUERAS, J ^{[1
]}

机构：

[1] CNRS,AUTOMAT & ANAL SYST LAB,F-31055 TOULOUSE,FRANCE

来源：

SOLID-STATE ELECTRONICS | 1980年 / 23卷 / 06期

关键词：

D O I：

10.1016/0038-1101(80)90041-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：591 / 598

页数：8

共 22 条

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