NUCLEATION AND GROWTH OF SILICON BY CVD

被引:69
作者
BLOEM, J [1 ]
机构
[1] CATHOLIC UNIV NIJMEGEN, SOLID STATE CHEM LAB, RIM, NIJMEGEN, NETHERLANDS
关键词
D O I
10.1016/0022-0248(80)90002-0
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:581 / 604
页数:24
相关论文
共 120 条
[71]  
NISHIZAWA JI, 1978, CRYSTAL GROWTH, V2, pCH2
[72]   SELECTIVE EPITAXIAL-GROWTH OF SILICON BY USING SILICON-NITRIDE FILM AS A MASK [J].
OGAWA, H ;
NISHINAGA, T ;
ARIZUMI, T ;
KASUGA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (12) :1675-+
[73]   STACKING-FAULT STRUCTURES IN CARBON-CONTAMINATED LOW-TEMPERATURE EPITAXIAL SILICON [J].
OGDEN, R ;
BRADLEY, RR ;
WATTS, BE .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 26 (01) :135-146
[74]   LOW-PRESSURE SILICON EPITAXY [J].
OGIRIMA, M ;
SAIDA, H ;
SUZUKI, M ;
MAKI, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) :903-908
[75]   NEW AMORPHOUS SILICON-BASED ALLOY FOR ELECTRONIC APPLICATIONS [J].
OVSHINSKY, SR ;
MADAN, A .
NATURE, 1978, 276 (5687) :482-484
[76]   NEW DEVELOPMENT IN STUDY OF AMORPHOUS SILICON HYDROGEN ALLOYS - STORY OF O [J].
PAESLER, MA ;
ANDERSON, DA ;
FREEMAN, EC ;
MODDEL, G ;
PAUL, W .
PHYSICAL REVIEW LETTERS, 1978, 41 (21) :1492-1495
[77]   ELIMINATION OF PROCESS-INDUCED STACKING-FAULTS BY PREOXIDATION GETTERING OF SI WAFERS .2. SI-3 N-4 PROCESS [J].
PETROFF, PM ;
ROZGONYI, GA ;
SHENG, TT .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (04) :565-570
[78]  
PETROFF PM, 1977, SEMICONDUCTOR SILICO, P761
[79]  
PHILLIPS JC, 1976, 13 P INT C PHYS SEM, P12
[80]   TRANSIENT AND STEADY-STATE RESPONSE OF DOPANT SYSTEM OF A SILICON EPITAXIAL REACTOR - TRANSFER-FUNCTION APPROACH [J].
REIF, R ;
KAMINS, TI ;
SARASWAT, K .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (11) :1860-1866