ELECTRICAL ACTIVATION OF BISMUTH IMPLANTED INTO SILICON BY RAPID THERMAL ANNEALING AND KINETICS OF DEFECTS

The rapid thermal annealing (RTA) of Si implanted with Bi+, to a dose of 5.0 X 10(14) cm-2 at the energy of 150 keV, was investigated using sheet resistivity, Hall measurements, and channeling analysis. Approximately 95% of the Bi dose is found substitutional and 90% is electrically active after annealing is performed at 600-degrees-C for times longer than 1 min. The electrical activation yield of Bi after RTA at temperatures greater-than-or-equal-to 700-degrees-C is observed to decrease when increasing the temperature and time of the annealing process. The data taken from electrical measurements and angular scan across the [100] axis are evidence that the electrically inactive concentration of the Bi correlates with the concentration of Bi atoms located slightly displaced from the crystal rows.