GROWTH AND STRUCTURE OF SEMICONDUCTING THIN-FILMS

[11] BARKER TV, 1907, MINERAL MAG, V14, P235

[12] BASSECHES H, 1961, P AIME SEMICONDUCTOR, V15, P69

[13] BATSFORD KO, 1963, ELECT COMMUN, V38, P354

[14] KINETICS OF INDUCTION PERIOD FOR NUCLEATION OF SILICON ON SI(111) SUBSTRATES AT U-H-V [J]. PHILOSOPHICAL MAGAZINE, 1970, 22 (175): : 135 - &

[15] EPITAXY OF SILICON ON ALUMINA-STRUCTURAL EFFECTS [J]. PHILOSOPHICAL MAGAZINE, 1966, 14 (127): : 31 - &

[16] EPITAXIAL DEPOSITION OF SILICON ON QUARTZ [J]. PHILOSOPHICAL MAGAZINE, 1964, 9 (102): : 965 - &

[17] INTERPRETATION OF ANOMALOUS LAYERS AT GAAS N+-N- STEP JUNCTIONS [J]. SOLID STATE COMMUNICATIONS, 1970, 8 (16) : 1313 - &

[18] ORIENTED GROWTH OF SEMICONDUCTORS .2. HOMOEPITAXY OF GALLIUM ARSENIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (10) : 1679 - &

[19] ORIENTED GROWTH OF SEMICONDUCTORS .3. GROWTH OF GALLIUM ARSENIDE ON GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (13) : 4687 - +

[20] INTRINSIC-EXTRINSIC STACKING-FAULT PAIRS IN EPITAXIALLY GROWN SILICON LAYERS [J]. APPLIED PHYSICS LETTERS, 1963, 3 (09) : 156 - 157

[11] BARKER TV, 1907, MINERAL MAG, V14, P235

[12] BASSECHES H, 1961, P AIME SEMICONDUCTOR, V15, P69

[13] BATSFORD KO, 1963, ELECT COMMUN, V38, P354

[14] KINETICS OF INDUCTION PERIOD FOR NUCLEATION OF SILICON ON SI(111) SUBSTRATES AT U-H-V [J]. PHILOSOPHICAL MAGAZINE, 1970, 22 (175): : 135 - &

[15] EPITAXY OF SILICON ON ALUMINA-STRUCTURAL EFFECTS [J]. PHILOSOPHICAL MAGAZINE, 1966, 14 (127): : 31 - &

[16] EPITAXIAL DEPOSITION OF SILICON ON QUARTZ [J]. PHILOSOPHICAL MAGAZINE, 1964, 9 (102): : 965 - &

[17] INTERPRETATION OF ANOMALOUS LAYERS AT GAAS N+-N- STEP JUNCTIONS [J]. SOLID STATE COMMUNICATIONS, 1970, 8 (16) : 1313 - &

[18] ORIENTED GROWTH OF SEMICONDUCTORS .2. HOMOEPITAXY OF GALLIUM ARSENIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (10) : 1679 - &

[19] ORIENTED GROWTH OF SEMICONDUCTORS .3. GROWTH OF GALLIUM ARSENIDE ON GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (13) : 4687 - +

[20] INTRINSIC-EXTRINSIC STACKING-FAULT PAIRS IN EPITAXIALLY GROWN SILICON LAYERS [J]. APPLIED PHYSICS LETTERS, 1963, 3 (09) : 156 - 157