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REDUCTION OF EXCESS PHOSPHORUS AND ELIMINATION OF DEFECTS IN PHOSPHORUS EMITTER DIFFUSIONS
被引:9
作者
:
MORRIS, BL
论文数:
0
引用数:
0
h-index:
0
MORRIS, BL
KATZ, LE
论文数:
0
引用数:
0
h-index:
0
KATZ, LE
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1978年
/ 125卷
/ 05期
关键词
:
D O I
:
10.1149/1.2131544
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:762 / 765
页数:4
相关论文
共 11 条
[1]
DIFFUSION PIPES IN SILICON NPN STRUCTURES
[J].
BARSON, F
论文数:
0
引用数:
0
h-index:
0
BARSON, F
;
HESS, MS
论文数:
0
引用数:
0
h-index:
0
HESS, MS
;
ROY, MM
论文数:
0
引用数:
0
h-index:
0
ROY, MM
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(02)
:304
-&
[2]
BARSON F, 1975, MAY M SOC TOR
[3]
CHARACTERIZATION OF MICROPLASMA SITES IN SILICON N+-P JUNCTIONS
[J].
DONOLATO, C
论文数:
0
引用数:
0
h-index:
0
机构:
CNR, LAMEL, I-40126 BOLOGNA, ITALY
CNR, LAMEL, I-40126 BOLOGNA, ITALY
DONOLATO, C
;
MERLI, PG
论文数:
0
引用数:
0
h-index:
0
机构:
CNR, LAMEL, I-40126 BOLOGNA, ITALY
CNR, LAMEL, I-40126 BOLOGNA, ITALY
MERLI, PG
;
VECCHI, I
论文数:
0
引用数:
0
h-index:
0
机构:
CNR, LAMEL, I-40126 BOLOGNA, ITALY
CNR, LAMEL, I-40126 BOLOGNA, ITALY
VECCHI, I
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977,
124
(03)
:473
-474
[4]
PHOSPHORUS DIFFUSION INTO SILICON USING PHOSPHINE
[J].
HEYNES, MSR
论文数:
0
引用数:
0
h-index:
0
机构:
Signetics Corporation, Sunnyvale, California
HEYNES, MSR
;
VANLOON, PGG
论文数:
0
引用数:
0
h-index:
0
机构:
Signetics Corporation, Sunnyvale, California
VANLOON, PGG
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(06)
:890
-&
[5]
PRECIPITATES FORMED BY HIGH-CONCENTRATION PHOSPHORUS DIFFUSION IN SILICON
[J].
JACCODINE, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories, Incorporated, Allentown, PA
JACCODINE, RJ
.
JOURNAL OF APPLIED PHYSICS,
1968,
39
(07)
:3105
-+
[6]
PRECIPITATION OF PHOSPHORUS ARSENIC AND BORON IN THIN SILICON FOILS
[J].
JOSHI, ML
论文数:
0
引用数:
0
h-index:
0
JOSHI, ML
;
DASH, S
论文数:
0
引用数:
0
h-index:
0
DASH, S
.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1967,
11
(03)
:271
-&
[7]
EFFECT OF GAS CONCENTRATIONS IN DIFFUSION OF SILICON FROM A PHOSPHINE SOURCE
[J].
KESPERIS, JS
论文数:
0
引用数:
0
h-index:
0
KESPERIS, JS
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(04)
:554
-&
[8]
KINETICS OF PHOSPHORUS PREDEPOSITION IN SILICON USING POCL3
[J].
NEGRINI, P
论文数:
0
引用数:
0
h-index:
0
机构:
CNR, LAMEL, VIA CASTAGNOLI 1, 40126 BOLOGNA, ITALY
CNR, LAMEL, VIA CASTAGNOLI 1, 40126 BOLOGNA, ITALY
NEGRINI, P
;
NOBILI, D
论文数:
0
引用数:
0
h-index:
0
机构:
CNR, LAMEL, VIA CASTAGNOLI 1, 40126 BOLOGNA, ITALY
CNR, LAMEL, VIA CASTAGNOLI 1, 40126 BOLOGNA, ITALY
NOBILI, D
;
SOLMI, S
论文数:
0
引用数:
0
h-index:
0
机构:
CNR, LAMEL, VIA CASTAGNOLI 1, 40126 BOLOGNA, ITALY
CNR, LAMEL, VIA CASTAGNOLI 1, 40126 BOLOGNA, ITALY
SOLMI, S
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(09)
:1254
-1260
[9]
UNIFORMITY OF PHOSPHORUS EMITTER CONCENTRATION FOR SHALLOW DIFFUSED TRANSISTORS
[J].
PAREKH, PC
论文数:
0
引用数:
0
h-index:
0
PAREKH, PC
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(02)
:173
-&
[10]
DETAILED ANALYSIS OF THIN PHOSPHORUS-DIFFUSED LAYERS IN PARA-TYPE SILICON
[J].
TANNENBAUM, E
论文数:
0
引用数:
0
h-index:
0
TANNENBAUM, E
.
SOLID-STATE ELECTRONICS,
1961,
2
(2-3)
:123
-132
←
1
2
→
共 11 条
[1]
DIFFUSION PIPES IN SILICON NPN STRUCTURES
[J].
BARSON, F
论文数:
0
引用数:
0
h-index:
0
BARSON, F
;
HESS, MS
论文数:
0
引用数:
0
h-index:
0
HESS, MS
;
ROY, MM
论文数:
0
引用数:
0
h-index:
0
ROY, MM
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(02)
:304
-&
[2]
BARSON F, 1975, MAY M SOC TOR
[3]
CHARACTERIZATION OF MICROPLASMA SITES IN SILICON N+-P JUNCTIONS
[J].
DONOLATO, C
论文数:
0
引用数:
0
h-index:
0
机构:
CNR, LAMEL, I-40126 BOLOGNA, ITALY
CNR, LAMEL, I-40126 BOLOGNA, ITALY
DONOLATO, C
;
MERLI, PG
论文数:
0
引用数:
0
h-index:
0
机构:
CNR, LAMEL, I-40126 BOLOGNA, ITALY
CNR, LAMEL, I-40126 BOLOGNA, ITALY
MERLI, PG
;
VECCHI, I
论文数:
0
引用数:
0
h-index:
0
机构:
CNR, LAMEL, I-40126 BOLOGNA, ITALY
CNR, LAMEL, I-40126 BOLOGNA, ITALY
VECCHI, I
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977,
124
(03)
:473
-474
[4]
PHOSPHORUS DIFFUSION INTO SILICON USING PHOSPHINE
[J].
HEYNES, MSR
论文数:
0
引用数:
0
h-index:
0
机构:
Signetics Corporation, Sunnyvale, California
HEYNES, MSR
;
VANLOON, PGG
论文数:
0
引用数:
0
h-index:
0
机构:
Signetics Corporation, Sunnyvale, California
VANLOON, PGG
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(06)
:890
-&
[5]
PRECIPITATES FORMED BY HIGH-CONCENTRATION PHOSPHORUS DIFFUSION IN SILICON
[J].
JACCODINE, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories, Incorporated, Allentown, PA
JACCODINE, RJ
.
JOURNAL OF APPLIED PHYSICS,
1968,
39
(07)
:3105
-+
[6]
PRECIPITATION OF PHOSPHORUS ARSENIC AND BORON IN THIN SILICON FOILS
[J].
JOSHI, ML
论文数:
0
引用数:
0
h-index:
0
JOSHI, ML
;
DASH, S
论文数:
0
引用数:
0
h-index:
0
DASH, S
.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1967,
11
(03)
:271
-&
[7]
EFFECT OF GAS CONCENTRATIONS IN DIFFUSION OF SILICON FROM A PHOSPHINE SOURCE
[J].
KESPERIS, JS
论文数:
0
引用数:
0
h-index:
0
KESPERIS, JS
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(04)
:554
-&
[8]
KINETICS OF PHOSPHORUS PREDEPOSITION IN SILICON USING POCL3
[J].
NEGRINI, P
论文数:
0
引用数:
0
h-index:
0
机构:
CNR, LAMEL, VIA CASTAGNOLI 1, 40126 BOLOGNA, ITALY
CNR, LAMEL, VIA CASTAGNOLI 1, 40126 BOLOGNA, ITALY
NEGRINI, P
;
NOBILI, D
论文数:
0
引用数:
0
h-index:
0
机构:
CNR, LAMEL, VIA CASTAGNOLI 1, 40126 BOLOGNA, ITALY
CNR, LAMEL, VIA CASTAGNOLI 1, 40126 BOLOGNA, ITALY
NOBILI, D
;
SOLMI, S
论文数:
0
引用数:
0
h-index:
0
机构:
CNR, LAMEL, VIA CASTAGNOLI 1, 40126 BOLOGNA, ITALY
CNR, LAMEL, VIA CASTAGNOLI 1, 40126 BOLOGNA, ITALY
SOLMI, S
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(09)
:1254
-1260
[9]
UNIFORMITY OF PHOSPHORUS EMITTER CONCENTRATION FOR SHALLOW DIFFUSED TRANSISTORS
[J].
PAREKH, PC
论文数:
0
引用数:
0
h-index:
0
PAREKH, PC
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(02)
:173
-&
[10]
DETAILED ANALYSIS OF THIN PHOSPHORUS-DIFFUSED LAYERS IN PARA-TYPE SILICON
[J].
TANNENBAUM, E
论文数:
0
引用数:
0
h-index:
0
TANNENBAUM, E
.
SOLID-STATE ELECTRONICS,
1961,
2
(2-3)
:123
-132
←
1
2
→