INFLUENCE OF 2-LEVEL PLANAR INTERCONNECTION PROCESSES USING BIAS-SPUTTERED SIO2 FOR MOSFETS

被引：2

作者：

TSUNEKAWA, S

KUME, H

HOMMA, Y

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 09期

关键词：

D O I：

10.1149/1.2097527

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2632 / 2637

页数：6

共 14 条

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[10]

TSUNEKAWA S, 1988, J ELECTROCHEM SOC, V135, P2557

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