SURFACE-LAYERS IN HEAT-TREATED GAAS

被引：3

作者：

CASTANO, JL

PIQUERAS, J

MUNOZ, E

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1978年 / 13卷 / 06期

关键词：

D O I：

10.1051/rphysap:01978001306029300

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：293 / 297

页数：5

共 10 条

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PEARSON, GL .

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[2]

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[3] EFFECT OF HEAT-TREATMENT ON NATURE OF TRAPS IN EPITAXIAL GAAS [J].

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MAJERFELD, A .

ELECTRONICS LETTERS, 1976, 12 (02) :52-53

[4] OCCURENCE OF HIGH RESISTANCE LAYER AT VAPOR EPITAXIAL GAAS FILM-SUBSTRATE INTERFACE [J].

HASEGAWA, F ;

SAITO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (09) :1125-&

[5] INFLUENCE OF HEAT-TREATMENT ON MORPHOLOGICAL AND ELECTRICAL-PROPERTIES OF GAAS EPILAYER-SUBSTRATE INTERFACE [J].

KAUFMANN, LMF ;

HEIME, K ;

BURCHARD, WG .

JOURNAL OF CRYSTAL GROWTH, 1976, 34 (02) :289-297

[6] THERMAL-DEGRADATION OF HOMOEPITAXIAL GAAS INTERFACES [J].

LUM, WY ;

WIEDER, HH ;

KOSCHEL, WH ;

BISHOP, SG ;

MCCOMBE, BD .

APPLIED PHYSICS LETTERS, 1977, 30 (01) :1-3

[7]

MUNOZ E, 1970, APPL PHYS LETT, V16, P262, DOI 10.1063/1.1653188

[8] EFFECT OF HEAT-TREATMENT ON ELECTRON TRAPS IN N-TYPE GAAS [J].

SUBRAMANIAN, S ;

GUHA, S ;

ARORA, BM .

SOLID-STATE ELECTRONICS, 1977, 20 (10) :799-802

[9] SELF-COMPENSATION OF DONORS IN HIGH-PURITY GAAS [J].

WOLFE, CM ;

STILLMAN, GE .

APPLIED PHYSICS LETTERS, 1975, 27 (10) :564-567

[10]

ZUCCA R, 1976, P N AM C GAAS RELATE

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