INTERACTIONS BETWEEN IMPLANTED MG AND BASE PARA-TYPE DOPANT (BE,ZN,C) IN HETEROJUNCTION BIPOLAR-TRANSISTOR DEVICES

被引：4

作者：

AMARGER, V

DUBONCHEVALLIER, C

GAO, Y

DESCOUTS, B

机构：

[1] France Télécom, Centre National d'Etudes des Télécommunications, Laboratoire de Bagneux, 92220 Bagneux

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 11期

关键词：

D O I：

10.1063/1.351355

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The interactions, in GaAlAs/GaAs heterojunction bipolar transistor structures, between implanted Mg atoms and different p-type base dopants (Be in layers grown by molecular beam epitaxy, Zn or C in layers grown by organometallic chemical vapor deposition) have been investigated. Different diffusion behaviors have been observed, according to the base dopant, either for the implanted Mg or for the base dopant itself. The resultant hole concentration profile obtained with a C-V electrochemical profiler has also been studied as a function of the base p-type dopant.

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页码：5694 / 5698

页数：5

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