CHARACTERISTICS OF SI-DOPED GAAS EPILAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION USING A SILANE SOURCE

被引：9

作者：

LIU, CW

CHEN, SL

LAY, JP

LEE, SC

LIN, HH

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 20期

关键词：

D O I：

10.1063/1.98579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1634 / 1636

页数：3

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