RANDOM AND CHANNELED IMPLANTATION PROFILES AND RANGE PARAMETERS FOR P AND AL IN CRYSTALLINE AND AMORPHIZED SI

被引：28

作者：

WILSON, RG

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 08期

关键词：

D O I：

10.1063/1.337060

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2797 / 2805

页数：9

共 25 条

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