REDUCTION OF GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR SIDEGATING BY ULTRAVIOLET OZONE CLEANUP PRIOR TO MOLECULAR-BEAM EPITAXIAL-GROWTH

被引：3

作者：

HITCHENS, WR

BRUNEMEIER, PE

DOBKIN, DM

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.584625

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：680 / 681

页数：2

共 14 条

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