NATURE OF FIXED OXIDE CHARGE

被引：49

作者：

RAIDER, SI ^{[1
]}

BERMAN, A ^{[1
]}

机构：

[1] IBM CORP, DIV SYST PROD, E FISHKILL FACIL, HOPEWELL JUNCTION, NY 12533 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 04期

关键词：

D O I：

10.1149/1.2131513

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：629 / 633

页数：5

共 43 条

[1] CRYSTALLOGRAPHIC SYMMETRY OF SURFACE STATE DENSITY IN THERMALLY OXIDIZED SILICON [J].

ARNOLD, E ;

LADELL, J ;

ABOWITZ, G .

APPLIED PHYSICS LETTERS, 1968, 13 (12) :413-+

[2]

BALK P, 1965, MAY EL SOC M SAN FRA

[3] EPR EVIDENCE FOR A POSITIVELY CHARGED VACANCY-OXYGEN DEFECT IN SILICON [J].

BROSIOUS, PR .

APPLIED PHYSICS LETTERS, 1976, 29 (04) :265-267

[4] SI-SIO2 FAST INTERFACE STATE MEASUREMENTS [J].

BROWN, DM ;

GRAY, PV .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) :760-+

[5] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

DEAL, BE ;

GROVE, AS .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&

[6] CURRENT UNDERSTANDING OF CHARGES IN THERMALLY OXIDIZED SILICON STRUCTURE [J].

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (06) :C198-C205

[7] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J].

DEAL, BE ;

SKLAR, M ;

GROVE, AS ;

SNOW, EH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) :266-+

[8]

DEAL BE, 1977, SEMICONDUCTOR SILICO

[9] OXIDATION OF SILICON BY WATER AND OXYGEN AND DIFFUSION IN FUSED SILICA [J].

DOREMUS, RH .

JOURNAL OF PHYSICAL CHEMISTRY, 1976, 80 (16) :1773-1775

[10] ELECTRON MEAN ESCAPE DEPTHS FROM X-RAY PHOTOELECTRON-SPECTRA OF THERMALLY OXIDIZED SILICON DIOXIDE FILMS ON SILICON [J].

FLITSCH, R ;

RAIDER, SI .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01) :305-308

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