CARBON DOPING AND GROWTH-RATE REDUCTION BY CCL4 DURING METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF GAAS

被引：31

作者：

LEE, JS ^{[1
]}

KIM, I ^{[1
]}

CHOE, BD ^{[1
]}

JEONG, WG ^{[1
]}

机构：

[1] SUNGKYUNKWAN UNIV, DEPT MAT ENGN, SUWON 440746, SOUTH KOREA

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 09期

关键词：

D O I：

10.1063/1.357219

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical, structural, and optical properties of GaAs grown by metalorganic chemical-vapor deposition using CCl4 have been studied and the growth rate reduction by CCl4 under various growth conditions has been investigated. Hole concentrations ranging from 2X10(16) to 1.8x10(20) cm(-3) have been obtained by varying V/III ratio and growth temperature. From Hall, x-ray, and low-temperature photoluminescence measurements, a low compensation is ensured. A growth rate reduction up to 50% has been observed. The dependence of the growth rate reduction on the growth temperature, the V/III ratio, and the CCl4 mole fraction was investigated. It is believed that the growth rate reduction is caused not by etching of solid GaAs but by reduction of Ga species through the formation of GaCl in gas phase.

引用

页码：5079 / 5084

页数：6

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