CONTROL OF BARRIER HEIGHT OF MIS TUNNEL-DIODES USING DEEP LEVEL IMPURITIES

被引：9

作者：

CHATTOPADHYAY, P ^{[1
]}

DAS, K ^{[1
]}

机构：

[1] INDIAN INST SCI, SOLID STATE & STRUCT CHEM UNIT, BANGALORE 560012, KARNATAKA, INDIA

来源：

SOLID-STATE ELECTRONICS | 1991年 / 34卷 / 04期

关键词：

D O I：

10.1016/0038-1101(91)90165-U

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The barrier height of MIS tunnel diodes is studied considering the effect of deep impurities. It is shown that the barrier height of a given MIS-system can be controlled by changing the density and the activation energy of the defect level. The study leads to the conclusion that deep impurities of character opposite to shallow impurities enhance the barrier height. On the other hand, the barrier height is lowered when the type of the deep impurities is the same as that of shallow impurities.

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页码：367 / 371

页数：5

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