AN ULTRA-HIGH-SPEED OPTOELECTRONIC INTEGRATED RECEIVER FOR FIBEROPTIC COMMUNICATIONS

被引：9

作者：

YANO, H

SASAKI, G

MURATA, M

HAYASHI, H

机构：

[1] Optoelectronics R&D Laboratories, Sumitomo Electric Industries, Ltd., Yokohama, 244, 1, Taya-cho, Sakae-ku

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 10期

关键词：

D O I：

10.1109/16.158796

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An ultra-high-speed optoetectronic integrated receiver consisting of a GaInAs p-i-n photodiode and a transimpedance AlInAs/GaInAs high-electron-mobility-transistor amplifier has been successfully fabricated on an InP substrate. A 3-dB bandwidth of 6 GHz with a transimpedance of 50 dB-OMEGA was achieved for the receiver with a feedback resistance of 750-OMEGA. Measured noise currents of the receiver were analyzed and found to be dominated by the low-frequency noise and the induced gate noise. The sensitivity of -21.2 dBm for 8.0-Gb/s NRZ signals was deduced from the noise current characteristics.

引用

收藏

页码：2254 / 2259

页数：6

相关论文

共 20 条

[1] 4 GBIT/S PIN/HBT MONOLITHIC PHOTORECEIVER [J].

CHANDRASEKHAR, S ;

DENTAI, AG ;

JOYNER, CH ;

JOHNSON, BC ;

GNAUCK, AH ;

QUA, GJ .

ELECTRONICS LETTERS, 1990, 26 (22) :1880-1882

[2] AN INP INGAAS P-I-N HBT MONOLITHIC TRANSIMPEDANCE PHOTORECEIVER [J].

CHANDRASEKHAR, S ;

JOHNSON, BC ;

BONNEMASON, M ;

TOKUMITSU, E ;

GNAUCK, AH ;

DENTAI, AG ;

JOYNER, CH ;

PERINO, JS ;

QUA, GJ ;

MONBERG, EM .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (07) :505-506

[3] A 3-GHZ TRANSIMPEDANCE OEIC RECEIVER FOR 1.3-1.55 MU-M FIBEROPTIC SYSTEMS [J].

CHANG, GK ;

HONG, WP ;

GIMLETT, JL ;

BHAT, R ;

NGUYEN, CK ;

SASAKI, G ;

YOUNG, JC .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (03) :197-199

[4] SUBPICOSECOND INP/INGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS [J].

CHEN, YK ;

NOTTENBURG, RN ;

PANISH, MB ;

HAMM, RA ;

HUMPHREY, DA .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (06) :267-269

[5] MONOLITHICALLY INTEGRATED RECEIVER FRONT END - IN0.53GA0.47AS P-I-N AMPLIFIER [J].

CHENG, CL ;

CHANG, RPH ;

TELL, B ;

PARKER, SMZ ;

OTA, Y ;

VELLACOLEIRO, GP ;

MILLER, RC ;

ZILKO, JL ;

KASPER, BL ;

BROWNGOEBELER, KF ;

MATTERA, VD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (09) :1439-1444

[6]

GIMLETT JL, 1989, 7TH INT C INT OPT OP

[7] 5.2-GHZ BANDWIDTH MONOLITHIC GAAS OPTOELECTRONIC RECEIVER [J].

HARDER, CS ;

VANZEGHBROECK, B ;

MEIER, H ;

PATRICK, W ;

VETTIGER, P .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (04) :171-173

[8] 8.2 GHZ BANDWIDTH MONOLITHIC INTEGRATED OPTOELECTRONIC RECEIVER USING MSM PHOTODIODE AND 0.5-MU-M RECESSED-GATE ALGAAS/GAAS HEMTS [J].

HURM, V ;

ROSENZWEIG, J ;

LUDWIG, M ;

BENZ, W ;

BERROTH, M ;

HUELSMANN, A ;

KAUFEL, G ;

KOEHLER, K ;

RAYNOR, B ;

SCHNEIDER, J .

ELECTRONICS LETTERS, 1991, 27 (09) :734-735

[9] MONOLITHIC INTEGRATION OF INGAAS P-I-N PHOTODETECTOR WITH FULLY ION-IMPLANTED INP JFET AMPLIFIER [J].

KIM, SJ ;

GUTH, G ;

VELLACOLEIRO, GP ;

SEABURY, CW ;

SPONSLER, WA ;

RHOADES, BJ .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (09) :447-449

[10] VERY HIGH-CURRENT GAIN INGAAS/INP HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

KYONO, CS ;

GERRARD, ND ;

PINZONE, CJ ;

MAZIAR, CM ;

DUPUIS, RD .

ELECTRONICS LETTERS, 1991, 27 (01) :40-41