X-RAY-SCATTERING FROM POINT-DEFECT AGGREGATES IN SINGLE-CRYSTALS

被引:14
作者
LAL, K
机构
来源
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS | 1989年 / 18卷
关键词
D O I
10.1016/0146-3535(89)90029-4
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:227 / 266
页数:40
相关论文
共 128 条
[81]   VERSETZUNGEN IN ANISOTROPEM MATERIAL [J].
LEIBFRIED, G .
ZEITSCHRIFT FUR PHYSIK, 1953, 135 (01) :23-43
[82]   AN INFRARED AND NEUTRON-SCATTERING ANALYSIS OF THE PRECIPITATION OF OXYGEN IN DISLOCATION-FREE SILICON [J].
LIVINGSTON, FM ;
MESSOLORAS, S ;
NEWMAN, RC ;
PIKE, BC ;
STEWART, RJ ;
BINNS, MJ ;
BROWN, WP ;
WILKES, JG .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (34) :6253-6276
[83]   CHARACTERIZATION OF PROCESS-INDUCED DEFECTS IN SILICON WITH TRIPLE-CRYSTAL DIFFRACTOMETRY [J].
LOMOV, AA ;
ZAUMSEIL, P ;
WINTER, U .
ACTA CRYSTALLOGRAPHICA SECTION A, 1985, 41 (MAY) :223-227
[84]   DIFFUSE-SCATTERING MEASUREMENTS WITH SYNCHROTRON RADIATION - INSTRUMENTATION AND TECHNIQUES [J].
MATSUBARA, E ;
GEORGOPOULOS, P .
JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1985, 18 (DEC) :377-383
[85]   THEORY OF DIFFUSE SCATTERING OF X-RAYS BY LOCAL LATTICE DISTORTIONS [J].
MATSUBARA, T .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1952, 7 (03) :270-274
[86]   INVESTIGATION OF NEUTRON-IRRADIATED SILICON BY DIFFUSE-X-RAY SCATTERING [J].
MAYER, W ;
PEISL, H .
JOURNAL OF NUCLEAR MATERIALS, 1982, 108 (1-2) :627-634
[87]  
NEWMAN RC, 1975, J PHYS C SOLID STATE, V8, P3944, DOI 10.1088/0022-3719/8/22/032
[88]   OXYGEN STRIATION AND THERMALLY INDUCED MICRODEFECTS IN CZOCHRALSKI-GROWN SILICON-CRYSTALS [J].
OHSAWA, A ;
HONDA, K ;
OHKAWA, S ;
SHINOHARA, K .
APPLIED PHYSICS LETTERS, 1980, 37 (02) :157-159
[89]   MICRODEFECTS DISTRIBUTION IN CZOCHRALSKI-GROWN SILICON-CRYSTALS [J].
OHSAWA, A ;
HONDA, K ;
SHIBATOMI, S ;
OHKAWA, S .
APPLIED PHYSICS LETTERS, 1981, 38 (10) :787-788
[90]   DETERMINATION OF OXYGEN CONCENTRATION PROFILES IN SILICON-CRYSTALS OBSERVED BY SCANNING IR ABSORPTION USING SEMICONDUCTOR-LASER [J].
OHSAWA, A ;
HONDA, K ;
OHKAWA, S ;
UEDA, R .
APPLIED PHYSICS LETTERS, 1980, 36 (02) :147-148