NEW MODEL OF THERMAL GROWTH OF A SILICON DIOXIDE LAYER

被引：12

作者：

LORATAMAYO, A

DOMINGUEZ, E

LORATAMAYO, E

LLABRES, J

机构：

来源：

APPLIED PHYSICS | 1978年 / 17卷 / 01期

关键词：

D O I：

10.1007/BF00885034

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：79 / 84

页数：6

共 21 条

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