ANOMALOUS TRANSIENT DIFFUSION OF BORON IMPLANTED INTO PREAMORPHIZED SI DURING RAPID THERMAL ANNEALING

被引：25

作者：

KIM, YM ^{[1
]}

LO, GQ ^{[1
]}

KWONG, DL ^{[1
]}

TSENG, HH ^{[1
]}

HANCE, R ^{[1
]}

机构：

[1] MOTOROLA INC,ADV PROD RES & DEV LAB,AUSTIN,TX 78762

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 22期

关键词：

D O I：

10.1063/1.102048

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2316 / 2318

页数：3

共 10 条

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[10] BORON, FLUORINE, AND CARRIER PROFILES FOR B AND BF2 IMPLANTS INTO CRYSTALLINE AND AMORPHOUS SI [J].

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