FABRICATION AND CHARACTERIZATION OF METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS USING SPUTTERED SILICON-NITRIDE FILM AS A GATE DIELECTRIC

被引：3

作者：

SUNDARAM, KB

SESHAN, SS

机构：

[1] Department of Electrical and Computer Engineering, University of Central Florida, Orlando, FL

[2] Department of Engineering, University of Cambridge, Cambridge, CB3 1PZ, Trumpington street

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1994年 / 77卷 / 01期

关键词：

D O I：

10.1080/00207219408926034

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

RF magnetron sputter deposited silicon nitride film was used as the gate dielectric material for the fabrication of metal-insulator-semiconductor field effect transistors, The fabrication process of an enhancement type n-channel device is discussed in detail. The electrical measurements for the fabricated devices indicated low threshold voltages.

引用

页码：61 / 69

页数：9

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