Characteristics of [6]phenacene thin film field-effect transistor

被引：41

作者：

Komura, Noriko ^{[1
]}

Goto, Hidenori ^{[1
]}

He, Xuexia ^{[1
]}

Mitamura, Hiroki ^{[1
]}

Eguchi, Ritsuko ^{[1
]}

Kaji, Yumiko ^{[1
]}

Okamoto, Hideki ^{[2
]}

Sugawara, Yasuyuki ^{[3
]}

Gohda, Shin ^{[4
]}

Sato, Kaori ^{[4
]}

Kubozono, Yoshihiro ^{[1
,5
]}

机构：

[1] Okayama Univ, Surface Sci Res Lab, Okayama 7008530, Japan

[2] Okayama Univ, Div Chem & Biochem, Okayama 7008530, Japan

[3] Kuramoto Seisakusho Co Ltd, Kurihara 9895508, Japan

[4] NARD Co Ltd, Amagasaki, Hyogo 6600805, Japan

[5] Okayama Univ, Res Ctr New Funct Mat Energy Prod Storage & Trans, Okayama 7008530, Japan

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 08期

基金：

日本科学技术振兴机构;

关键词：

WATER;

D O I：

10.1063/1.4747201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transistor characteristics are studied for field-effect transistors (FETs) with thin films of [6]phenacene, which has six benzene rings and W-shape structure. The molecular alignment preferable for FET transport is found to be formed in [6]phenacene thin films. The transistor shows clear p-channel FET characteristics with field-effect mobility mu as high as 3.7 cm(2) V-1 s(-1). The similar O-2 sensing properties to picene FET are observed in [6]phenacene thin film FET. The bias stress properties are observed in [6]phenacene thin film FET. The pulse-voltage application suppresses the bias-stress effect and it enables a continuous O-2 sensing in [6]phenacene FET. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4747201]

引用

页数：4

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