Iron diffusivity in silicon: Impact of charge state - Comment

被引：8

作者：

Heiser, T

Mesli, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 13期

关键词：

D O I：

10.1063/1.116040

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1868 / 1869

页数：2

共 12 条

[1]

FISTUL VI, 1989, SOV PHYS SEMICOND+, V23, P424

[2] ANNEALING AND PROFILE OF INTERSTITIAL IRON IN BORON-DOPED SILICON [J].

GAO, X ;

MOLLENKOPF, H ;

YEE, S .

APPLIED PHYSICS LETTERS, 1991, 59 (17) :2133-2135

[3] CHARGE-STATE-DEPENDENT DIFFUSION AND CARRIER-EMISSION-LIMITED DRIFT OF IRON IN SILICON [J].

HEISER, T ;

MESLI, A .

PHYSICAL REVIEW LETTERS, 1992, 68 (07) :978-981

[4] DETERMINATION OF THE COPPER DIFFUSION-COEFFICIENT IN SILICON FROM TRANSIENT ION-DRIFT [J].

HEISER, T ;

MESLI, A .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1993, 57 (04) :325-328

[5] ELECTRONICALLY CONTROLLED REACTIONS OF INTERSTITIAL IRON IN SILICON [J].

KIMERLING, LC ;

BENTON, JL .

PHYSICA B & C, 1983, 116 (1-3) :297-300

[6] IRON DIFFUSIVITY IN SILICON - IMPACT OF CHARGE-STATE [J].

KOVESHNIKOV, SV ;

ROZGONYI, GA .

APPLIED PHYSICS LETTERS, 1995, 66 (07) :860-862

[7] COPPER DIFFUSIVITY IN SILICON - A REEXAMINATION [J].

MESLI, A ;

HEISER, T ;

MULHEIM, E .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 25 (2-3) :141-146

[8] CHEMICAL INTERACTIONS AMONG DEFECTS IN GERMANIUM AND SILICON [J].

REISS, H ;

FULLER, CS ;

MORIN, FJ .

BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (03) :535-636

[9] CHARGE-STATE-DEPENDENT ACTIVATION-ENERGY FOR DIFFUSION OF IRON IN SILICON [J].

TAKAHASHI, H ;

SUEZAWA, M ;

SUMINO, K .

PHYSICAL REVIEW B, 1992, 46 (03) :1882-1885

[10] AN ELASTIC ENERGY APPROACH TO THE INTERSTITIAL DIFFUSION OF 3D ELEMENTS IN SILICON [J].

UTZIG, J .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (10) :3868-3871

← 1 2 →