Diagnostics of fluorocarbon radicals in a large-area permanent magnet electron cyclotron resonance etching plasma

Diagnostics of fluorocarbon radicals and fluorine (F) atom species in a size-scaleable large-area permanent magnet electron cyclotron resonance (ECR) etching plasma employing CF4 and C4F8 gases are carried out. Son-intrusive infrared laser diode absorption spectroscopy and actinometric measurement techniques are used in evaluating the performance of the permanent magnet ECR plasma source and in studying the kinetic processes associated with etching plasma chemistry. Successful measurements of the absolute CF and CF2 radical and F atom densities have been achieved. In particular for C4F8 plasma, enhanced CF and CF2 radical densities which afford higher selectivity in the etching of SiO2 on Si are discussed. At a pressure of 0.4 Pa and an input microwave power of 900 W the CF and CF2 radical and F atom densities in C4F8 plasma were 1.7 x 10(13) cm(-3), 6.0 x 10(13) cm(-3) and 1.5 x 10(13) cm(-3), respectively. These results are also discussed in comparison with results fora conventional electromagnet ECR plasma source.