Electrical properties of buried B/Si surface phases

被引：2

作者：

Zotov, AV ^{[1
]}

Lifshits, VG

Rupp, T

Eisele, I

机构：

[1] Vladivostok State Univ Econ & Serv, Vladivostok 690600, Russia

[2] Inst Automat & Control Proc, Vladivostok 690041, Russia

[3] Univ Bundeswehr Munchen, Inst Phys, D-85577 Neubiberg, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 11期

关键词：

D O I：

10.1063/1.367447

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Conductivity and Hall-effect measurements have been carried out at 24 K for a set of various layered structures with buried B/Si surface phases used as delta-doped layers. Evidence is found for hole mobility enhancement as a consequence of boron dopant ordering. The electrical measurements reveal a basic difference in room temperature adsorption for boron on Si(100) and Si(111) surfaces. The characterization of the samples containing buried B/Si(111) interfaces and extra-thin Ge layers suggests promise for improving the structure and electrical properties of the buried surface phases. The hole mobility in epi-Si/Ge/B/Si(111) structures is found to be about 2.5 times higher than in epi-Si/B/Si(111) samples. (C) 1998 American Institute of Physics. [S0021-8979(98)04310-2].

引用

页码：5865 / 5869

页数：5

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