MORPHOLOGY OF PLATINUM SILICIDE FILMS PREPARED BY CONVENTIONAL AND RAPID THERMAL ANNEALING AND DEEP LEVELS INDUCED IN SILICON

被引：14

作者：

DIMITRIADIS, CA ^{[1
]}

POLYCHRONIADIS, EK ^{[1
]}

EVANGELOU, EK ^{[1
]}

GIAKOUMAKIS, GE ^{[1
]}

机构：

[1] UNIV IOANNINA,DEPT PHYS,GR-45332 IOANNINA,GREECE

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 06期

关键词：

D O I：

10.1063/1.349289

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron microscopic studies and the electrical properties of Pt contacts on n-type Si annealed by conventional furnace and rapid thermal annealing (RTA) were investigated with scanning electron microscopy, transmission electron microscopy, x-ray analysis, capacitance-voltage, and deep-level transient spectroscopy measurements. An incomplete reaction between Pt and Si is observed after furnace annealing at 550-degrees-C due to the presence of oxygen in the ambient. An almost complete reaction between Pt and Si is achieved after silicidation by RTA at 550-degrees-C. An acceptorlike level located 0.11 eV below the conductionband edge with a concentration of 2 x 10(13) cm-3 is detected only after furnace annealing at 550-degrees-C. Silicidation by RTA at 550-degrees-C does not introduce traps in the Si band gap.

引用

页码：3109 / 3114

页数：6

共 23 条

[11] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].