NEW OXIDE-GROWTH LAW AND THE THERMAL-OXIDATION OF SILICON

被引：42

作者：

HU, SM

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来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 10期

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D O I：

10.1063/1.93797

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：872 / 874

页数：3

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