ANTIMONY DIFFUSION IN SILICON - EFFECTS OF AMBIENT GAS AND TIME

被引：2

作者：

PINTCHOVSKI, F

TOBIN, PJ

KOTTKE, M

PRICE, JB

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 08期

关键词：

D O I：

10.1149/1.2115982

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1875 / 1883

页数：9

共 30 条

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