PREDEPOSITION IN SILICON AS AFFECTED BY FORMATION OF ORTHORHOMBIC SIP AND CUBIC SIO-2.P-2O-5 AT PSG-SI INTERFACE

被引：23

作者：

SOLMI, S ^{[1
]}

CELOTTI, G ^{[1
]}

NOBILI, D ^{[1
]}

NEGRINI, P ^{[1
]}

机构：

[1] CNR LAMEL LAB,I-40126 BOLOGNA,ITALY

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 05期

关键词：

D O I：

10.1149/1.2132905

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：654 / 660

页数：7

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