OXIDE RELIABILITY CRITERION FOR THE EVALUATION OF THE ENDURANCE PERFORMANCE OF ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORIES

被引：15

作者：

PAPADAS, C

GHIBAUDO, G

PANANAKAKIS, G

RIVA, C

MORTINI, P

机构：

[1] SGS THOMSON MICROELECTR,CENT RES & DEV,I-20041 AGRATE BRIANZA,ITALY

[2] SGS THOMSON MICROELECTR,CENT RES & DEV,F-38019 GRENOBLE,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 09期

关键词：

D O I：

10.1063/1.350758

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The impact of the oxide reliability on the endurance performance of nonvolatile memories [electrically erasable read only memories (EEPROMs)] is analyzed quantitatively. The degradation rate of tunnel SiO2 layers as obtained from EEPROM cells as well as tunnel oxide capacitors subjected to different modes of electrical stress (write/erase operations, static and dynamic stress) are compared and attributed to a specific charge generation mechanism. Furthermore, a reliability criterion for the optimization of the tunnel oxide technology entering the fabrication of EEPROM cells is also proposed.

引用

收藏

页码：4589 / 4593

页数：5

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