CHEMICAL ETCHING OF (100) GAAS IN A SULFURIC-ACID HYDROGEN-PEROXIDE WATER-SYSTEM

被引：20

作者：

BARYCKA, I

ZUBEL, I

机构：

[1] Technical Univ of Wroclaw, Wroclaw, Pol, Technical Univ of Wroclaw, Wroclaw, Pol

来源：

JOURNAL OF MATERIALS SCIENCE | 1987年 / 22卷 / 04期

关键词：

D O I：

10.1007/BF01233125

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

10

引用

收藏

页码：1299 / 1304

页数：6

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共 10 条

[1] CHEMICAL ETCHING CHARACTERISTICS OF (001)GAAS
ADACHI, S
OE, K
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (12) : 2427 - 2435
[2] CHEMICAL ETCHING CHARACTERISTICS OF (001)INP
ADACHI, S
KAWAGUCHI, H
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (06) : 1342 - 1349
[3] CHEMICAL ETCHING OF GAAS
ADACHI, S
OE, K
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (01) : 126 - 130
[4] A NEW ETCHANT SYSTEM, K2CR2O7-H2SO4-HCL,FOR GAAS AND INP
ADACHI, S
KAWAGUCHI, H
IWANE, G
[J]. JOURNAL OF MATERIALS SCIENCE, 1981, 16 (09) : 2449 - 2456
[5] CHEMICAL ETCHING OF INP AND INGAASP INP
ADACHI, S
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) : 609 - 613
[6] SELECTIVE ETCHING OF GALLIUM ARSENIDE CRYSTALS IN H2SO4-H2O2-H2O SYSTEM
LIDA, S
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (05) : 768 - &
[7] ON THE PREFERENTIAL ETCHING OF GAAS BY H2SO4-H2O2-H2O
MACFADYEN, DN
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (09) : 1934 - 1941
[8] NEW ETCHING SOLUTION SYSTEM, H3PO4-H2O2-H2O, FOR GAAS AND ITS KINETICS
MORI, Y
WATANABE, N
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (09) : 1510 - 1514
[9] CHEMICAL ETCHING OF SILICON .4. ETCHING TECHNOLOGY
SCHWARTZ, B
ROBBINS, H
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (12) : 1903 - 1909
[10] ETCHING OF (1 1 1) AS SURFACES OF GAAS WITH NITRIC-ACID
WEISS, BL
[J]. JOURNAL OF MATERIALS SCIENCE, 1976, 11 (08) : 1569 - 1571