THE EFFECT OF RECOILED OXYGEN ON DAMAGE REGROWTH AND ELECTRICAL-PROPERTIES OF THROUGH-OXIDE IMPLANTED SI

被引：19

作者：

SADANA, DK

WU, NR

WASHBURN, J

CURRENT, M

MORGAN, A

REED, D

MAENPAA, M

机构：

[1] UNIV ILLINOIS,URBANA,IL 61801

[2] CALTECH,PASADENA,CA 91125

[3] SIGNET CORP,PHILIPS RES LABS,SUNNYVALE,CA 94086

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 209卷 / MAY期

关键词：

D O I：

10.1016/0167-5087(83)90877-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：743 / 750

页数：8

共 27 条

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[15] RESIDUAL LATTICE DAMAGE IN AS-IMPLANTED AND ANNEALED SI [J].

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[16] RECOIL OXYGEN IMPLANTS AND THERMAL REDISTRIBUTION OF OXYGEN IN THROUGH-OXIDE ARSENIC-IMPLANTED SI [J].

MAGEE, TJ ;

LEUNG, C ;

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APPLIED PHYSICS LETTERS, 1981, 39 (07) :564-566

[17] RESIDUAL DEFECTS IN SI PRODUCED BY RECOIL IMPLANTATION OF OXYGEN [J].

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CULLIS, AG .

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[18]

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[19] INFLUENCE OF AN OXIDIZING ANNEALING AMBIENT ON DISTRIBUTION OF AS, SB, AND GA IMPLANTED INTO SILICON [J].

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[20] ANOMALOUS RESIDUAL DEFECTS IN SILICON AFTER ANNEALING OF THROUGH OXIDE PHOSPHORUS IMPLANTED SAMPLES [J].

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