SINGLE-ENDED OUTPUT GAAS ALGAAS SINGLE QUANTUM-WELL LASER WITH A DRY-ETCHED CORNER REFLECTOR

被引：15

作者：

HAGBERG, M ^{[1
]}

LARSSON, A ^{[1
]}

ENG, ST ^{[1
]}

机构：

[1] CALTECH,JET PROP LAB,PASADENA,CA 91109

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 20期

关键词：

D O I：

10.1063/1.103026

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaAs/AlGaAs single quantum well lasers with integrated corner reflectors have been fabricated using chemically assisted ion beam etching. The air-GaAs interface is internally totally reflecting, and no coherent radiation is transmitted through the corner reflector. The corner reflector laser was compared with a conventional Fabry-Perot laser cleaved from the same wafer. An 11% reduction in threshold current and a reduction of the far-field angle from 4.4 ° to 0.7 ° was measured.

引用

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页码：1934 / 1936

页数：3

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[1] ALGAAS LASERS WITH MICRO-CLEAVED MIRRORS SUITABLE FOR MONOLITHIC INTEGRATION [J].

BLAUVELT, H ;

BARCHAIM, N ;

FEKETE, D ;

MARGALIT, S ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1982, 40 (04) :289-290

[2] LOW THRESHOLD GAAS/GAALAS BH LASERS WITH ION-BEAM-ETCHED MIRRORS [J].

BOUADMA, N ;

RIOU, J ;

KAMPFER, A .

ELECTRONICS LETTERS, 1985, 21 (13) :566-568

[3] OPTOELECTRONIC INTEGRATED-CIRCUITS [J].

FORREST, SR .

PROCEEDINGS OF THE IEEE, 1987, 75 (11) :1488-1497

[4] NEW JUNCTION LASER RESONANT STRUCTURES [J].

GARFINKEL, M ;

ENGELER, WE ;

LOCKE, DJ .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (08) :2321-&

[5] ALGAAS/GAAS BURIED MULTIQUANTUM WELL LASERS WITH A REACTIVE ION ETCHED WINDOW FACET [J].

SEMURA, S ;

OHTA, T ;

KURODA, T ;

NAKASHIMA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06) :L463-L465

[6] GAAS AND GAALAS REACTIVE ION ETCHING IN BCL3-CL2 MIXTURE [J].

TAMURA, H ;

KURIHARA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (09) :L731-L733

[7] HIGH-POWER ALGAAS/GAAS SINGLE QUANTUM-WELL LASERS WITH CHEMICALLY ASSISTED ION-BEAM ETCHED MIRRORS [J].

TIHANYI, P ;

WAGNER, DK ;

ROZA, AJ ;

VOLLMER, HJ ;

HARDING, CM ;

DAVIS, RJ ;

WOLF, ED .

APPLIED PHYSICS LETTERS, 1987, 50 (23) :1640-1641

[8] AN ALGAAS LASER WITH HIGH-QUALITY DRY ETCHED MIRRORS FABRICATED USING AN ULTRAHIGH-VACUUM INSITU DRY ETCHING AND DEPOSITION PROCESSING SYSTEM [J].

UCHIDA, M ;

ISHIKAWA, S ;

TAKADO, N ;

ASAKAWA, K .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (11) :2170-2177

[9] NONSELECTIVE ETCHING OF GAAS ALGAAS DOUBLE HETEROSTRUCTURE LASER FACETS BY CL-2 REACTIVE ION ETCHING IN A LOAD-LOCKED SYSTEM [J].

VAWTER, GA ;

COLDREN, LA ;

MERZ, JL ;

HU, EL .

APPLIED PHYSICS LETTERS, 1987, 51 (10) :719-721