共 21 条
[1]
SIH4 DOPING OF MBE GAAS AND ALXGA1-XAS
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1985, 3 (02)
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[5]
GAS SOURCE MBE GROWTH OF HIGH-QUALITY INP USING TRIETHYLINDIUM AND PHOSPHINE
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1985, 24 (04)
:L221-L223
[6]
MBE GROWTH OF HIGH-QUALITY GAAS USING TRIETHYLGALLIUM AS A GALLIUM SOURCE
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1986, 25 (01)
:L52-L53
[8]
NEW GAAS, GAP, AND GAASX P1-X VACUUM DEPOSITION TECHNIQUE USING ARSINE AND PHOSPHINE GAS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1974, 11 (02)
:506-510
[9]
GAS SOURCE MBE OF INP AND GAXIN1-XPYAS1-Y - MATERIALS PROPERTIES AND HETEROSTRUCTURE LASERS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1985, 3 (02)
:657-665