MODEL FOR HYSTERESIS AND KINK BEHAVIOR OF MOS-TRANSISTORS OPERATING AT 4.2-K

被引：58

作者：

DIERICKX, B ^{[1
]}

WARMERDAM, L ^{[1
]}

SIMOEN, E ^{[1
]}

VERMEIREN, J ^{[1
]}

CLAEYS, C ^{[1
]}

机构：

[1] IMEC VZW,KAPELDREEF 75,B-3030 LEUVEN,BELGIUM

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 07期

关键词：

SEMICONDUCTOR DEVICES; MOS - Mathematical Models;

D O I：

10.1109/16.3372

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The hysteresis and kink characteristics of MOS transistors (MOSTs) operating at 4. 2 K have been investigated. The response time of a MOST depends exponentially on the inverse of the drain voltage. A model is proposed that explains both the transient and kink behavior of the devices. It is based on the forced formation of the depletion layer caused by the avalanche-generated substrate current. The model is compared with previous models published in the literature.

引用

页码：1120 / 1125

页数：6

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[11] SEMICONDUCTOR-DEVICES SUITABLE FOR USE IN CRYOGENIC ENVIRONMENTS [J].